Study to determine and improve design for lithium-doped solar cells Quarterly report, 1 Jan. - 31 Mar. 1971

Lithium donor density gradient measurements for prediction of lithium cell behavior after electron irradiation and recoverabilit

Study to determine and improve design for lithium-doped solar cells Quarterly report, 1 Apr. - 30 Jun. 1970

Lithium action effects on spontaneous annealing of radiation damage in bulk silicon and silicon solar cell

Action of lithium in radiation hardened silicon solar cells Quarterly report, 23 Apr. - 15 Jul. 1968

Recovery properties of lithium containing p-n silicon solar cells after radiation damag

Action of lithium in radiation-hardened silicon solar cells Quarterly report, 16 Jul. - 15 Oct. 1968

Action of lithium in recovery of irradiated silicon solar cell

The interrelation of process techniques and space radiation effects in metal-insulator-semiconductor structures Final report, 21 Apr. 1966 - 31 Jul. 1967

Interrelation of process techniques and space radiation effects in metal oxide semiconductor

Radiation damage in lithium-containing solar cells Final report, 21 Jun. 1966 - 20 Mar. 1968

Interaction of lithium with defects induced in silicon solar cells by one MeV electron bombardmen

Radiation Monitoring in Mixed Environments at CERN: from the IRRAD6 Facility to the LHC Experiments

RadFET and p-i-n diode semiconductor dosimeters from different manufacturers will be used for radiation monitoring at the Experiments of the CERN LHC accelerator. In this work these sensors were exposed over three months in the CERN-IRRAD6 facility that provides mixed high-energy particles at low rates. The aim was to validate the operation of such sensors in a radiation field where the conditions are close to the ones expected inside full working LHC particle detectors. The results of this long-term irradiation campaign are presented, discussed and compared with measurements by other dosimetric means as well as Monte Carlo simulations. Finally, the integration of several dosimetric devices in one sensor carrier is also presented

New fowler-nordheim injection, charge neutralization, and gamma tests on the REM RFT300 RADFET dosimeter

Through the injection of a Fowler-Nordheim tunnel current or the inversion of oxide fields during irradiation (Radiation-Induced Charge Neutralization), the oxide charge trapped in thick-oxide (300 nm) commercial RADFETs, often called QOT could be erased. Novel trapped-hole and interface characteristics were observed after treatments of this type at high doses. With both erasure techniques, it was possible only to neutralize a fraction of the oxide trapped charge. A non negligible amount of charge and border traps is deemed here to be ?intractable?. That adjective an a symbol, QIN, are introduced for the first time in this paper. Later sections discuss the possible impact of these results. The conclusion for dosimetry is that a ?reusable RADFET? dosimeter, working up to an unprecedented dose before wearing out, may be a practical possibility.Fil: Lipovetzky, José. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Holmes Siedle, A.. No especifíca;Fil: García Inza, Mariano Andrés. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires; ArgentinaFil: Carbonetto, Sebastián Horacio. Universidad de Buenos Aires; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Redin, Eduardo Gabriel. Universidad de Buenos Aires; ArgentinaFil: Faigon, A.. Universidad de Buenos Aires; Argentin

MOSFET dosimetry for microbeam radiation therapy at the European Synchrotron Radiation Facility

Preclinical experiments are carried out with ~20–30 μm wide, ~10 mm high parallel microbeams of hard, broad-‘‘white’’-spectrum x rays (~50–600 keV) to investigate microbeam radiation therapy (MRT) of brain tumors in infants for whom other kinds of radiotherapy are inadequate and/or unsafe. Novel physical microdosimetry (implemented with MOSFET chips in the ‘‘edge-on’’ mode) and Monte Carlo computer-simulated dosimetry are described here for selected points in the peak and valley regions of a microbeam-irradiated tissue-equivalent phantom. Such microbeam irradiation causes minimal damage to normal tissues, possible because of rapid repair of their microscopic lesions. Radiation damage from an array of parallel microbeams tends to correlate with the range of peak-valley dose ratios (PVDR). This paper summarizes comparisons of our dosimetric MOSFET measurements with Monte Carlo calculations. Peak doses at depths \u3c22 mm are 18% less than Monte Carlo values, whereas those depths \u3e22 mm and valley doses at all depths investigated (2 mm–62 mm) are within 2–13% of the Monte Carlo values. These results lend credence to the use of MOSFET detector systems in edge-on mode for microplanar irradiation dosimetry